Focused Ion Beam Microscopy and Micromachining

نویسندگان

  • C. A. Volkert
  • A. M. Minor
چکیده

The FIB Instrument The basic functions of the FIB, namely, imaging and sputtering with an ion beam, require a highly focused beam. A consistent tenet of any focused beam is that the smaller the effective source size, the more current that can be focused to a point. Unlike the broad ion beams generated from plasma sources, high-resolution ion beams are defined by the use of a field ionization source with a small effective source size on the order of 5 nm, therefore enabling the beam to be tightly focused. The ion source type used in all commercial systems and in the majority of research systems designed with micromachining applications in mind is the liquidmetal ion source (LMIS).6,7 Of the existing ion source types, the LMIS provides the brightest and most highly focused beam (when connected to the appropriate optics). There are a number of different types of LMIS sources, the most widely used being a Ga-based blunt needle source. Ga has decided advantages over other LMIS metals such as In, Bi, Sn, and Au because of its combination of low melting temperature (30∞C), low volatility, and low vapor pressure. The low melting temperature makes the source easy to design and operate, and because Ga does not react with the material defining the needle (typically W) and evaporation is negligible, Ga-based LMISs are typically more stable than other LMIS metals. During operation, Ga flows from a reservoir to the needle tip (with an end radius of about 10 mm), where it is extracted by field emission. A large negative potential between the needle and an extraction electrode generates an electric field of magnitude 1010 V/m at the needle tip. The balance between the electrostatic forces and the Ga surface tension wetting the tapered W needle geometry results in the formation of a single Taylor cone at the needle tip. For typical emission currents used in FIB microscopes (~2 mA), a cusp forms at the tip of the Taylor cone with a tip radius of approximately 5 nm. The simplest and most widely used ion beam columns consist of two lenses (a condenser and objective lens) to define the beam and then focus it on the sample, beam-defining apertures to select the beam diameter and current, deflection plates to raster the beam over the sample surface, stigmation poles to ensure a spherical beam profile, and a high-speed beam blanker to quickly deflect the beam

منابع مشابه

Sample preparation by focused ion beam micromachining for transmission electron microscopy imaging in front-view.

This article deals with the development of an original sample preparation method for transmission electron microscopy (TEM) using focused ion beam (FIB) micromachining. The described method rests on the use of a removable protective shield to prevent the damaging of the sample surface during the FIB lamellae micromachining. It enables the production of thin TEM specimens that are suitable for p...

متن کامل

Novel Application of Focused Ion Beam Electron Microscopy (fib-em) in Preparation and Analysis of Microfossil Ultrastructures: a New View of Complexity in Early Eukaryotic Organisms

Coupled dual-beam focused ion beam electron microscopy (FIB-EM) has gained popularity across multiple disciplines over the past decade. Widely utilized as a stand-alone instrument for micromachining and metal or insulator deposition in numerous industries, the submicron-scale ion milling and cutting capabilities of FIB-EM systems have been well documented in the materials science literature. Th...

متن کامل

Focused ion beam micromachining of eukaryotic cells for cryoelectron tomography.

Cryoelectron tomography provides unprecedented insights into the macromolecular and supramolecular organization of cells in a close-to-living state. However because of the limited thickness range (< 0.5-1 μm) that is accessible with today's intermediate voltage electron microscopes only small prokaryotic cells or peripheral regions of eukaryotic cells can be examined directly. Key to overcoming...

متن کامل

Three-dimensional micromachining of silicon using focused high-energy ion beams

There are many techniques available for two-dimensional machining and patterning of semiconductor surfaces for optoelectronic and microelectronic applications. These mainly use photolithography, electron beam or X-ray lithography or reactive ion etching. Smooth surfaces and high-aspect ratio sidewalls can be produced, but they are all limited to creating a single etch depth per processing stage...

متن کامل

Review Article Direct-Write Ion Beam Lithography

Patterning with a focused ion beam (FIB) is an extremely versatile fabrication process that can be used to create microscale and nanoscale designs on the surface of practically any solid sample material. Based on the type of ion-sample interaction utilized, FIBbasedmanufacturing can be both subtractive and additive, even in the same processing step. Indeed, the capability of easily creating thr...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

متن کامل
عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2007